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1 memory all data sheets are subject to change without notice (858) 503-3300- fax: (858) 503-3301 - www.maxwell.com 1 megabit (128k x 8-bit) eeprom 28c010t ?2001 maxwell technologies all rights reserved. 12.19.01 rev 8 1000582 f eatures : ? 128k x 8-bit eeprom ?r ad -p ak ? radiation-hardened against natural space radia- tion ? total dose hardness: - > 100 krad (si), depending upon space mission ? excellent single event effects: - no latchup > 120 mev/mg/cm 2 - seu > 90 mev/mg/cm 2 read mode ? package: - 32-pin r ad -p ak flat pack/dip package - jedec-approved byte-wide pinout ? high speed: - 120, 150, and 200 ns maximum access times available ? high endurance: - 10,000 erase/write (in page mode), 10-year data reten- tion ? page write mode: - 1 to 128 bytes ? low power dissipation - 20 mw/mhz active (typical) - 110 w standby (maximum) ? standard jedec package width d escription : maxwell technologies? 28c010t high-density 1 megabit (128k x 8-bit) eeprom microcir cuit features a greater than 100 krad (si) total dose tolerance, depending upon space mis- sion. the 28c010t is capable of in -system electrical byte and page programmability. it has a 128-byte page programming function to make its erase and write operations faster. it also features data polling and a ready/busy signal to indicate the completion of erase and programming operations. in the 28c010t, hardware data protection is provided with the res pin, in addition to noise protection on the we signal and write inhibit on power on and off. software data protection is imple- mented using the jedec opt ional standard algorithm. maxwell technologies' patented r ad -p ak ? packaging technol- ogy incorporates radiation shie lding in the microcircuit pack- age. it eliminates the need for box shielding while providing the required radiation shielding fo r a lifetime in orbit or space mission. in a geo orbit, r ad -p ak provides greater than 100 krad (si) radiation dose toleranc e. this product is available with screening up to class s. high voltage generator control logic timing address buffer and latch y decoder x decoder y gating memory array i/o buffer and input latch data latch v cc v ss res oe ce we res a0 a6 a7 a16 i/o0 i/o7 rdy/busy logic diagram
memory 2 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 t able 1. 28c010t p inout d escription p in s ymbol d escription 12-5, 27, 26, 23, 25, 4, 28, 3, 31, 2 a0-a16 address 24 oe output enable 22 ce chip enable 29 we write enable 32 v cc power supply 16 v ss ground 1 rdy/busy ready/busy 30 res reset t able 2. 28c010t a bsolute m aximum r atings p arameter symbol min max units supply voltage (relative to v ss )v cc -0.6 +7.0 v input voltage (relative to v ss )v in -0.5 1 1. v in min = -3.0v for pulse width < 50ns. +7.0 v operating temperature range t opr -55 +125 c storage temperature range t stg -65 +150 c t able 3. d elta l imits p arameter v ariation i cc 1 10% i cc 2 10% i cc 3a 10% i cc 3b 10% t able 4. 28c010t r ecommended o perating c onditions p arameter s ymbol m in m ax u nits supply voltage v cc 4.5 5.5 v input voltage res _pin v il -0.3 1 0.8 v v ih 2.2 v cc +0.3 v h v cc -0.5 v cc +1 thermal impedance ? flat package jc -- 2.17 c/w
memory 3 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 operating temperature range t opr -55 +125 c 1. v il min = -1.0v for pulse width < 50 ns t able 5. 28c010t c apacitance (t a = 25 c, f = 1 mhz) p arameter s ymbol m in m ax u nits input capacitance: v in = 0v 1 c in -- 6 pf output capacitance: v out = 0v 1 c out -- 12 pf 1. guaranteed by design. t able 6. 28c010t dc e lectrical c haracteristics (v cc = 5v 10%, t a = -55 to +125 c, unless otherwise specified ) p arameter t est c ondition s ymbol m in m ax u nits input leakage current v cc = 5.5v, v in = 5.5v i il -- 2 1 a output leakage current v cc = 5.5v, v out = 5.5v/0.4v i lo -- 2 a standby v cc current ce = v cc i cc1 -- 20 a ce = v ih i cc2 -- 1 ma operating v cc current i out = 0ma, duty = 100%, cycle = 1s at v cc = 5.5v i cc3 -- 15 ma i out = 0ma, duty = 100%, cycle = 150ns at v cc = 5.5v -- 50 input voltage res _pin v il -- 0.8 v v ih 2.2 -- v h v cc -0.5 -- output voltage i ol = 2.1 ma v ol -- 0.4 v i oh = -0.4 ma v oh 2.4 -- 1. i li on res = 100 ua max. t able 7. 28c010t ac e lectrical c haracteristics for r ead o peration 1 (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol m in m ax u nits address access time ce = oe = v il , we = v ih -120 -150 -200 t acc -- -- -- 120 150 200 ns t able 4. 28c010t r ecommended o perating c onditions p arameter s ymbol m in m ax u nits
memory 4 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 chip enable access time oe = v il , we = v ih -120 -150 -200 t ce -- -- -- 120 150 200 ns output enable access time ce = v il , we = v ih -120 -150 -200 t oe 0 0 0 75 75 100 ns output hold to address change ce = oe = v il , we = v ih -120 -150 -200 t oh 0 0 0 -- -- -- ns output disable to high-z 2 ce = v il , we = v ih -120 -150 -200 ce = oe = v il , we = v ih -120 -150 -200 t df t dfr 0 0 0 0 0 0 50 50 60 300 350 450 ns res to output delay 3 ce = oe = v il , we = v ih -120 -150 -200 t rr -- -- -- 400 450 650 ns 1. test conditions: input pulse levels - 0.4v to 2.4v; input rise and fall times < 20ns; output load - 1 ttl gate + 100pf (inclu ding scope and jig); reference levels for measuring timing - 0.8v/1.8v. 2. t df and t dfr are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. guaranteed by design. t able 8. 28c010t ac e lectrical c haracteristics for p age /b yte e rase and b yte w rite o perations (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol m in 1 m ax u nits address setup time -120 -150 -200 t as 0 0 0 -- -- -- ns t able 7. 28c010t ac e lectrical c haracteristics for r ead o peration 1 (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol m in m ax u nits
memory 5 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 chip enable to write setup time (we controlled) -120 -150 -200 t cs 0 0 0 -- -- -- ns write pulse width ce controlled -120 -150 -200 we controlled -120 -150 -200 t cw t wp 200 250 350 200 250 350 -- -- -- -- -- -- ns address hold time -120 -150 -200 t ah 150 150 200 -- -- -- ns data setup time -120 -150 -200 t ds 75 100 150 -- -- -- ns data hold time -120 -150 -200 t dh 10 10 20 -- -- -- ns chip enable hold time (we controlled) -120 -150 -2000 t ch 0 0 0 -- -- -- ns write enable to write setup time (ce controlled) -120 -150 -200 t ws 0 0 0 -- -- -- ns write enable hold time (ce controlled) -120 -150 -200 t wh 0 0 0 -- -- -- ns output enable to write setup time -120 -150 -200 t oes 0 0 0 -- -- -- ns t able 8. 28c010t ac e lectrical c haracteristics for p age /b yte e rase and b yte w rite o perations (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol m in 1 m ax u nits
memory 6 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 output enable hold time -120 -150 -200 t oeh 0 0 0 -- -- -- ns write cycle time 2 -120 -150 -200 t wc -- -- -- 10 10 20 ms data latch time -120 -150 -200 t dl 250 300 400 -- -- -- ns byte load window -120 -150 -200 t bl 100 100 200 -- -- -- s byte load cycle -120 -150 -200 t blc 0.55 0.55 0.95 30 30 30 s time to device busy -120 -150 -200 t db 100 120 170 -- -- -- ns write start time 3 -120 -150 -200 t dw 150 150 250 -- -- -- ns res to write setup time -120 -150 -200 t rp 100 100 200 -- -- -- s v cc to res setup time 4 -120 -150 -200 t res 1 1 3 -- -- -- s 1. use this device in a longer cycle than this value. 2. t wc must be longer than this value unless polling techniques or rdy/busy are used. th is device automatically completes the internal write operation within this value. 3. next read or write operation can be initiated after t dw if polling techniques or rdy/busy are used. 4. gauranteed by design. t able 8. 28c010t ac e lectrical c haracteristics for p age /b yte e rase and b yte w rite o perations (v cc = 5v + 10%, t a = -55 to +125 c) p arameter s ymbol m in 1 m ax u nits
memory 7 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f igure 1. r ead t iming w aveform t able 9. 28c010t m ode s election 1 1. x = don?t care. p arameter ce oe we i/o res rdy/busy read v il v il v ih d out v h high-z standby v ih x x high-z x high-z write v il v ih v il d in v h high-z --> v ol deselect v il v ih v ih high-z v h high-z write inhibit x x v ih -- x -- xv il x--x-- data polling v il v il v ih data out (i/o7) v h v ol program x x x high-z v il high-z
memory 8 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f igure 2. b yte w rite t iming w aveform (1) (we c ontrolled )
memory 9 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f igure 3. b yte w rite t iming w aveform (2) (ce c ontrolled )
memory 10 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f igure 4. p age w rite t iming w aveform (1) (we c ontrolled )
memory 11 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f igure 5. p age w rite t iming w aveform (2) (ce c ontrolled ) f igure 6. d ata p olling t iming w aveform
memory 12 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f igure 7. s oftware d ata p rotection t iming w aveform (1) ( in protection mode ) f igure 8. s oftware d ata p rotection t iming w aveform (2) ( in non - protection mode ) eeprom a pplication n otes this application note describ es the programming procedures for the eepr om modules and with details of various techniques to preserve data protection. automatic page write page-mode write feature allows 1 to 128 bytes of data to be writte n into the eeprom in a single write cycle, and allows the undefined data within 128 bytes to be written corresponding to the undefined address (a0 to a6). loading the first byte of data, the data load window opens 30s for the second byte. in the same manner each additional byte of data can be loaded within 30s. in case ce and we are kept high for 100 s a fter data input, eeprom enters erase and write mode automatically and only the input data are written into the eeprom.
memory 13 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 we , ce pin operation during a write cycle, ad dresses are latched by the falling edge of we or ce , and data is latched by the rising edge of we or ce . data polling data polling function allows the status of the eeprom to be determined. if eepr om is set to read mode during a write cycle, an inversion of the last byte of data to be loaded outputs from i/o 7 to indicate that the eeprom is per- forming a write operation. rdy/busy signal rdy/busy signal also allows a comparison operation to determine the status of the eeprom. the rdy/busy signal has high impedance except in write cycle and is lowered to v ol after the first write signal. at the-end of a write cycle, the rdy/busy signal changes state to high impedance. res signal when res is low, the eeprom cannot be read and programmed. therefore, data can be protected by keeping res low when v cc is switched. res should be high during read and programming because it doesn?t provide a latch function. data protection to protect the data during operation and power on/off, the eeprom has the internal functions described below. 1. data protection against noise of control pins (ce , oe , we ) during operation.
memory 14 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 during readout or standby, noise on the control pins may act as a trigger and turn the eeprom to programming mode by mis- take. to prevent this phenomenon, the eeprom has a noise cancella tion function that cuts noise if its width is 20ns or less in programming mode. be careful not to allow noise of a width of more than 20ns on the control pins. 2. data protection at v cc on/off when v cc is turned on or off, noise on the control pins generated by ex ternal circuits, such as cpus, may turn the eeprom to programming mode by mistake. to prevent this unintentional programming, the eeprom must be kept in unprogrammable state during v cc on/off by using a cpu reset signal to res pin. res should be kept at v ss level when v cc is turned on or off. the eeprom br eaks off programming operation when res become low, programming operat ion doesn?t finish correctly in case that res falls low during programming operation. res should be kept high for 10 ms after the last data input. 3. software data protection
memory 15 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 the software data protection function is to prevent unintentional progr amming caused by noise generat ed by external circuits. in software data protection mode, 3 bytes of data must be input before write data as follows. these bytes can switch the non- protection mode to the protection mode. software data protection mode can be canceled by inputting the fo llowing 6 bytes. then, the eeprom turns to the non-protec- tion mode and can write data normally. however, when the data is input in the canceling cycle, the data cannot be written.
memory 16 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 d32-02 note: all dimensions in inches 32 p in d ual i n -l ine p ackage s ymbol d imension m in n om m ax a -- 0.152 0.225 b 0.014 0.018 0.026 b2 0.045 0.050 0.065 c 0.008 0.010 0.018 d -- 1.600 1.680 e 0.510 0.590 0.620 ea 0.600 bsc ea/2 0.300 bsc e 0.100 bsc l 0.135 0.145 0.155 q 0.015 0.037 0.070 s1 0.005 0.025 -- s2 0.005 -- -- n32
memory 17 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 f32-10 note: all dimensions in inches. 28c010t 32-p in r ad -p ak ? f lat p ackage s ymbol d imension m in n om m ax a 0.121 0.134 0.147 b 0.015 0.017 0.022 c 0.004 0.005 0.009 d -- 0.820 0.830 e 0.472 0.480 0.488 e1 -- -- 0.498 e2 0.304 0.31 -- e3 0.030 0.085 -- e 0.050bsc l 0.355 0.365 0.375 q 0.020 0.035 0.045 s1 0.005 0.027 -- n32
memory 18 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 important notice: these data sheets are created using the chip manufacturer s published specifications. maxwell technologies verifies functionality by testing key parameters either by 100% testing, sample test ing or characterization. the specifications presented within these data sheets represent the latest and most accurate information available to date. however, these specifications are subject to change without notice and maxwell technologies assumes no responsibility for the us e of this information. maxwell technologies? products are not authorized for use as critical components in li fe support devices or systems without express written approval from maxwell technologies. any claim against maxwell technologies must be made within 90 days from the date of shipment from maxwell tech- nologies. maxwell technologies? liability shall be limited to replacement of defective parts.
memory 19 all data sheets are subject to change without notice ?2001 maxwell technologies all rights reserved. 1 megabit (128k x 8-bit) eeprom 28c010t 12.19.01 rev 8 1000582 product ordering options model number feature option details 28c010t xx f x -xx access time screening flow package radiation feature base product nomenclature 12 = 120 ns (for example) 15 = 150 ns 20 = 200 ns monolithic s = maxwell class s b = maxwell class b e = engineering (testing @ +25c ) i = industrial (testing @ -55c, +25c, +125c) d = dual in-line package (dip) f = flat pack rp = r ad -p ak ? package rt1 = guaranteed to 10 krad at die level rt2 = guaranteed to 25 krad at die level rt4 = guaranteed to 40 krad at die level 1 megabit (128k x 8-bit) eeprom

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